Point Defects in 2D Materials for quantum technologies

Point defects, such as substitutional impurities and vacancies, are essential  in electronics.   Thus, controlled doping of semiconductors is a key resource in microelectronics. The quantum properties of certain  individual point-defects   play a central role in the development of quantum technologies, including quantum sensing, quantum communications and quantum computers.

For instance, single P dopants in Silicon are being explored as quantum bits for Silicon based quantum computer architectures.  NV centers in diamond,  point defects consisting of a vacancy next to a substitutional Nitrogen impurity,   are paramagnetic defects that act as very bright single-photon emitters. Importantly, their photon yield  depends dramatically on the spin state, making it possible to carry out optically detected single-spin resonance experiments, with numerous applications as quantum sensors.

In 2D Materials,  there are point defects that are either paramagnetic, such as atomic hydrogen chemisorbed on graphene, or act as single photon emitters, coming from yet to be identified point defects in hexagonal BN.  Both types of defect  could find applications  for quantum sensing and quantum communications.  A high-stake goal for the QuantaLab is to find a point defect in a 2D material with properties analogous those of NV centers in diamond.

QuantaLab counts with the facilities and expertise to fabricate some  2D materials by CVD,  to carry out their characterisation at the micro scale (Raman), nanoscale ( AFM) and atomic scale (electron microscopy),  to measure the optical properties,  fabricate devices,   compute their electronic properties from first principles and model their  quantum spin dynamics, optical response and transport.